Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 21-22

  Bangsaruntip, S ^a   Majumdar, A ^a   Cohen, G M ^a   Engelmann, S U ^a   Zhang, Y ^a   Guillorn, M ^a   Gignac, L M ^a   Mittal, S ^a   Graham, W S ^a   Joseph, E A ^a   Klaus, D P ^a   Chang, J ^a   Cartier, E A ^a   Sleight, J W ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CYLINDRICAL CAPACITORS; GATE-ALL-AROUND; RING OSCILLATOR; SELF-HEATING; SILICON NANOWIRES; SIZE DEPENDENCE; TOPDOWN;

NANOWIRES;

OSCILLATORS (ELECTRONIC);

EID: 77957884572     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556136     Document Type: Conference Paper

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