SCOPUS 정보 검색 플랫폼

Volumn 1, Issue 5, 2011, Pages 845-853

Defects in Cu(In,Ga)Se 2 chalcopyrite semiconductors: A comparative study of material properties, defect states, and photovoltaic performance

(7) Cao, Qing a Gunawan, Oki a Copel, Matthew a Reuter, Kathleen B a Chey, S Jay a Deline, Vaughn R b Mitzi, David B a

a IBM T J WATSON RESEARCH CENTER (United States)

b IBM ALMADEN RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVITY LEVELS; ADMITTANCE SPECTROSCOPIES; ANTI-SITE DEFECT; BULK COMPOSITIONS; CHALCOPYRITE LAYERS; CHALCOPYRITE SEMICONDUCTOR; CIGS FILMS; COMPARATIVE STUDIES; COMPLEX NATURE; CROSSOVER BEHAVIOR; CU(IN , GA)SE; CU(IN ,GA)(SE ,S)2; DEFECT LEVELS; DEFECT STATE; DEFECTIVE LAYERS; DEVICE PERFORMANCE; FILM FORMATIONS; GROWTH CONDITIONS; HIGH DENSITY; MATERIAL CHARACTERIZATIONS; MATERIAL PROPERTY; MEDIUM ENERGY ION SCATTERING; PHOTOVOLTAIC; PHOTOVOLTAIC PERFORMANCE; POLYCRYSTALLINE COMPOUNDS; PROCESS VARIATION; PV PERFORMANCE; SCANNING ELECTRONS;

COPPER; COPPER COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC ADMITTANCE; FILM GROWTH; GALLIUM; PHOTOELECTRONS; POINT DEFECTS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SELENIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE DEFECTS;

EID: 84863636566 PISSN: 16146832 EISSN: 16146840 Source Type: Journal
DOI: 10.1002/aenm.201100344 Document Type: Article

Times cited : (143)

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- M. A. Contreras, M. J. Romero, B. T. E. Hasoon, R. Noufi, S. Ward, K. Ramanathan, Thin Solid Films 2002, 403, 204.
- (2002) Thin Solid Films , vol.403 , pp. 204
- Contreras, M.A.¹ Romero, M.J.² Hasoon, B.T.E.³ Noufi, R.⁴ Ward, S.⁵ Ramanathan, K.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.