Microstructure of Cu(In,Ga)Se2 films deposited in low Se vapor pressure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 5 A, 1999, Pages 2888-2892

  Nishiwaki, Shiro ^a   Kohara, Naoki ^a   Negami, Takayuki ^a   Miyake, Hideo ^b   Wada, Takahiro ^c  

^a PANASONIC CORPORATION   (Japan)

^b MIE UNIVERSITY   (Japan)

^c RYUKOKU UNIVERSITY   (Japan)

Author keywords

Cu(In,Ga)Se2; Se vapor pressure; Solar cell; Surface reaction; TEM

Indexed keywords

COPPER COMPOUNDS; CRYSTAL MICROSTRUCTURE; GLASS; GRAIN BOUNDARIES; LIME; MOLYBDENUM; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; VAPOR PRESSURE; VAPORIZATION;

COPPER INDIUM GALLIUM SELENIDE;

SEMICONDUCTING FILMS;

EID: 0032628005     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2888     Document Type: Article

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