Defects in Cu(In, Ga) Se2 semiconductors and their role in the device performance of thin-film solar cells

Progress in Photovoltaics: Research and Applications

Volumn 5, Issue 2, 1997, Pages 121-130

  Burgelman, M ^a   Engelhardt, F ^b   Guillemoles, J F ^c   Herberholz, R ^d   Igalson, M ^e   Klenk, R ^f   Lampert, M ^g   Meyer, T ^b   Nadenau, V ^d   Niemegeers, A ^a   Parisi, J ^b   Rau, U ^b   Schock, H W ^d   Schmitt, M ^b   Seifert, O ^b   Walter, T ^d   Zott, S ^h  

^a GHENT UNIVERSITY   (Belgium)

^b UNIVERSITY OF BAYREUTH   (Germany)

^c PSL RESEARCH UNIVERSITY   (France)

^d UNIVERSITY OF STUTTGART   (Germany)

^e WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^f HAHN MEITNER INSTITUT   (Germany)

^g SIEMENS AG   (Germany)

^h DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SOLAR CELLS; THIN FILMS;

CHALCOPYRITE SEMICONDUCTORS; ELECTRICAL DEFECT SPECTROSCOPY;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 0031096773     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-159X(199703/04)5:2<121::AID-PIP159>3.0.CO;2-4     Document Type: Article

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