Reinterpretation of defect levels derived from capacitance spectroscopy of CIGSe solar cells

Thin Solid Films

Volumn 517, Issue 7, 2009, Pages 2153-2157

  Igalson, Malgorzata ^a   Urbaniak, Aleksander ^a   Edoff, Marika ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

Capacitance; CIGSe; Defect levels; Solar cells

Indexed keywords

CAPACITANCE; COPPER; DEEP LEVEL TRANSIENT SPECTROSCOPY; GALLIUM; PHOTOVOLTAIC CELLS; SELENIUM; SOLAR CELLS; SOLAR EQUIPMENT;

ACCEPTOR LEVELS; ANTISITES; BIASED JUNCTIONS; CAPACITANCE CHARACTERISTICS; CAPACITANCE SPECTROSCOPIES; CAPACITANCE-VOLTAGE PROFILING; CIGSE; CU(IN , GA)SE; DEEP DEFECTS; DEEP LEVELS; DEFECT LEVELS; DEVICE EFFICIENCIES; ELECTRON CAPTURES; EXPERIMENTAL DATUM; INTERFACE STATE; INTRINSIC DEFECTS; LOW TEMPERATURES; METASTABILITY; METASTABLE EFFECTS; RED ILLUMINATIONS; ROOM TEMPERATURES; TRANSIENT SPECTROSCOPIES; VOLTAGE BIAS;

DEFECTS;

EID: 58949088464     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.092     Document Type: Article

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