Characterization of the Cu(In,Ga)Se2/Mo interface in CIGS solar cells

Thin Solid Films

Volumn 387, Issue 1-2, 2001, Pages 118-122

  Wada, T ^a   Kohara, N ^b   Nishiwaki, S ^b   Negami, T ^b  

^a RYUKOKU UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

Differential quantum efficiency; MoSe2; Ohmic; Wide band gap

Indexed keywords

COPPER COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; INTERFACES (MATERIALS); MOLYBDENUM; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

HETEROCONTACTS;

SOLAR CELLS;

EID: 0035967557     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01846-0     Document Type: Article

References (12)