Effects of annealing under various atmospheres on electrical properties of Cu(In,Ga)Se2 films and CdS/Cu(In,Ga)Se2 heterostructures

Thin Solid Films

Volumn 516, Issue 20, 2008, Pages 7036-7040

  Sakurai, T ^a   Ishida, N ^a   Ishizuka, S ^b   Islam, M M ^a   Kasai, A ^a   Matsubara, K ^b   Sakurai, K ^b   Yamada, A ^b   Akimoto, K ^a   Niki, S ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

71.20.Nr; 71.55.Ht; 73.61.Le; Admittance spectroscopy; Annealing; CdS CIGS interface; Cu(In,Ga)Se2; Defect state density

Indexed keywords

COPPER ALLOYS; ELECTRIC PROPERTIES; GALLIUM; PHOTOACOUSTIC EFFECT; SELENIUM; STEEL ANALYSIS;

ELECTRICAL (ELECTRONIC) PROPERTIES;

ANNEALING;

EID: 45849117653     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.135     Document Type: Article

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