Transient stages during the chemical vapour deposition of silicon carbide from CH 3SiCl 3/H 2: Impact on the physicochemical and interfacial properties of the coatings

Thin Solid Films

Volumn 520, Issue 19, 2012, Pages 6075-6087

  Chollon, Georges ^a   Langlais, Francis ^a   Placide, Maud ^a   Weisbecker, Patrick ^a  

^a Laboratoire des Composites Thermostructuraux   (France)

Author keywords

Adhesion; Chemical vapour deposition; Gas phase analysis; Kinetics; Microstructure; Scratch testing; Silicon carbide; Transient stages

Indexed keywords

BI-LAYER; CHEMICAL VAPOUR DEPOSITION; CODEPOSITION; DEPOSITION TEMPERATURES; GAS-PHASE ANALYSIS; GASPHASE; INTERFACIAL PROPERTY; POOR ADHESION; SCRATCH TESTING; TRANSIENT STAGE;

ADHESION; CARBON; CHEMICAL VAPOR DEPOSITION; COATINGS; ENZYME KINETICS; MICROSTRUCTURE; SILICON CARBIDE; VAPORS;

DIAMOND FILMS;

EID: 84863565624     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.05.066     Document Type: Article

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