In situ optical analysis of the gas phase during the deposition of silicon carbide from methyltrichlorosilane

Journal of the Electrochemical Society

Volumn 143, Issue 5, 1996, Pages 1654-1661

  Ganz, M ^a   Dorval, N ^a   Lefebvre, M ^a   Pealat M ^a   Loumagne, F ^b   Langlais, F ^b  

^a ONERA   (France)

^b Laboratoire des Composites Thermostructuraux   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DECOMPOSITION; GASES; MATHEMATICAL MODELS; NUMERICAL METHODS; PRESSURE MEASUREMENT; RAMAN SPECTROSCOPY; REACTION KINETICS; SILANES; THERMAL EFFECTS;

COHERENT ANTI STOKES RAMAN SPECTROSCOPY; COMPUTER MODEL; GAS PHASE; HOT ZONE; LOW PRESSURE HOT WALL REACTORS; METHYLTRICHLOROSILANE; PARTIAL PRESSURES;

SILICON CARBIDE;

EID: 0030148155     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836694     Document Type: Article

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