In situ measurements and growth kinetics of silicon carbide chemical vapor deposition from methyltrichlorosilane

Journal of Crystal Growth

Volumn 219, Issue 3, 2000, Pages 245-252

  Sone, H ^a,b   Kaneko, T ^a   Miyakawa, N ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; MASS TRANSFER; MATHEMATICAL MODELS; PARTIAL PRESSURE; PRESSURE EFFECTS; REACTION KINETICS; THERMAL EFFECTS; THERMOGRAVIMETRIC ANALYSIS; VAPORS;

METHYLTRICHLOROSILANE;

SILICON CARBIDE;

EID: 0034298987     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00616-3     Document Type: Article

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