Effect of Diluent Gases on Growth Behavior and Characteristics of Chemically Vapor Deposited Silicon Carbide Films

Journal of the American Ceramic Society

Volumn 82, Issue 2, 1999, Pages 331-337

  Kim, Han Su ^a   Choi, Doo Jin ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; FILM GROWTH; FILM PREPARATION; GRAPHITE; HYDROGEN; MICROHARDNESS; SILANES; SURFACE ROUGHNESS;

DILUENT GASES; METHYLTRICHLOROSILANE;

SILICON CARBIDE;

EID: 0033078844     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1551-2916.1999.tb20066.x     Document Type: Article

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