Preferred orientation of chemical vapor deposited polycrystalline silicon carbide films

Chemical Vapor Deposition

Volumn 8, Issue 3, 2002, Pages 99-104

  Kajikawa, Yuya ^a   Noda, Suguru ^a   Komiyama, Hiroshi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Langmuir type adsorption; Preferred orientation; Silicon carbide; Theoretical modeling

Indexed keywords

ADSORPTION; CHEMICAL VAPOR DEPOSITION; DEPOSITION; LANGMUIR BLODGETT FILMS; METALLIC FILMS; MORPHOLOGY; POLYCRYSTALLINE MATERIALS; X RAY DIFFRACTION ANALYSIS;

LANGMUIR-TYPE ADSORPTION; PREFERRED ORIENTATION; SELECTED-AREA DIFFRACTION (SAD); THEORETICAL MODELING;

SILICON CARBIDE;

EID: 0011316957     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3862(20020503)8:3<99::AID-CVDE99>3.0.CO;2-C     Document Type: Article

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