Effect of nitrogen flow rate on the properties of TiN film deposited by e beam evaporation technique

Applied Surface Science

Volumn 258, Issue 22, 2012, Pages 8498-8505

  Arshi, Nishat ^a   Lu, Junqing ^a   Koo, Bon Heun ^a   Lee, Chan Gyu ^a   Ahmed, Faheem ^a  

^a Changwon National University   (South Korea)

Author keywords

e beam evaporation; FESEM; Resistivity; Titanium nitride; XPS; XRD

Indexed keywords

ELECTRIC CONDUCTIVITY; EVAPORATION; FIELD EMISSION MICROSCOPES; FLOW RATE; GRAIN SIZE AND SHAPE; METALLIC FILMS; NITROGEN; SCANNING ELECTRON MICROSCOPY; TIN; TITANIUM DIOXIDE; TITANIUM NITRIDE; X RAY DIFFRACTION;

COLUMNAR GRAIN STRUCTURE; E BEAM EVAPORATION; ELECTRICAL RESISTIVITY MEASUREMENTS; FESEM; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; FOUR POINT PROBE; NITROGEN FLOW RATES; PREFERRED ORIENTATIONS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84863532049     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.04.179     Document Type: Article

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