SCOPUS 정보 검색 플랫폼

Volumn 5, Issue 3, 2012, Pages

Effect of diffused b during annealing on the electronic structure of the MgO barrier in CoFeB/MgO/CoFeB magnetic tunnel junctions

(5) Han, Yoonsung a Han, Jinhee a Choi, Hyoung Joon a Shin, Hyun Joon b Hong, Jongill a

a Yonsei University (South Korea)

b Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED FILMS; BORON ATOM; BORON CONCENTRATIONS; CHEMICAL STATE; FIRST-PRINCIPLES CALCULATION; IMPURITIES IN; MAGNETIC TUNNEL JUNCTION; MGO; MGO BARRIER;

CALCULATIONS; COBALT COMPOUNDS; ELECTRONIC STRUCTURE; MAGNETIC DEVICES; X RAY PHOTOELECTRON SPECTROSCOPY;

BORON;

EID: 84863397217 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.5.033001 Document Type: Article

Times cited : (9)

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