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Volumn 91, Issue 10, 2007, Pages

Variation in the properties of the interface in a CoFeBMgOCoFeB tunnel junction during thermal annealing

c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BIAS VOLTAGE; ELECTRIC CONDUCTANCE; INTERFACES (MATERIALS); MAGNETORESISTANCE; REDUCTION;

BLOCH STATE; BOTTOM INTERFACE; POSITIVE BIAS STATE; TUNNELING MAGNETORESISTANCE RATIO; X-RAY PHOTOEMISSION SPECTROSCOPY;

TUNNEL JUNCTIONS;

EID: 34548487113 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2779915 Document Type: Article

Times cited : (38)

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