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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 25-28, 2007, Pages

Crystallization of amorphous CoFeB ferromagnetic layers in CoFeB/MgO/CoFeB magnetic tunnel junctions

(8) Takeuchi, Takashi a Tsunekawa, Koji a,b Choi, Young Suk b Nagamine, Yoshinori b Djayaprawira, David D b Genseki, Akira a Hoshi, Yoichi c Kitamoto, Yoshitaka a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b Canon ANELVA Technix Corporation (Japan)

c TOKYO POLYTECHNIC UNIVERSITY (Japan)

Author keywords

CoFeB; Coherent tunneling; Epitaxy; Magnetic tunnel junction; MgO tunnel barrier; Tunneling magnetoresistance effect

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; CRYSTALLIZATION; ELECTRON DIFFRACTION; MAGNETORESISTANCE; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

COHERENT TUNNELING; CRYSTAL GRAINS; MAGNETIC TUNNEL JUNCTION; MGO TUNNEL BARRIER; TUNNELING MAGNETORESISTANCE EFFECT;

FERROMAGNETIC MATERIALS;

EID: 34547850463 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.L623 Document Type: Article

Times cited : (39)

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