Band structure of the epitaxial FeMgOGaAs (001) tunnel junction studied by x-ray and ultraviolet photoelectron spectroscopies

Applied Physics Letters

Volumn 89, Issue 15, 2006, Pages

  Lu, Y ^a   Le Breton, J C ^a   Turban, P ^a   Lpine B ^a   Schieffer, P ^a   Jzquel G ^a  

^a UMR 6627   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT STATES; MONOCRYSTALS; SCHOTTKY BARRIER HEIGHT (SBH); UNDERLAYERS;

BAND STRUCTURE; CRYSTAL DEFECTS; EPITAXIAL GROWTH; FERMI LEVEL; HETEROJUNCTIONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

TUNNEL JUNCTIONS;

EID: 33749996959     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2361273     Document Type: Article

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