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Japanese Journal of Applied Physics

Volumn 51, Issue 6 PART 2, 2012, Pages

Characterization of low-frequency noise in etched GaAs nanowire field-effect transistors having SiN x gate insulator

(5) Muramatsu, Toru a Miura, Kensuke a Shiratori, Yuta a Yatabe, Zenji a Kasai, Seiya a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE SIZES; DISCRETE TRAPS; GAAS; GATE INSULATOR; GATE LENGTH; LOW-FREQUENCY NOISE; NANOWIRE FET; NOISE MODELS; NOISE SPECTRA; SCHOTTKY-GATE; SIZE DEPENDENCE; TIME CONSTANTS;

FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; NANOWIRES; SEMICONDUCTING GALLIUM; SILICON NITRIDE;

NANOTECHNOLOGY;

EID: 84863317067 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.06FE18 Document Type: Article

Times cited : (15)

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