Evidence for an additional noise source modifying conventional 1/f frequency dependence in sub-μm metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 78, Issue 3, 2001, Pages 380-382

  Ueno, H ^a   Kitamura, T ^a   Matsumoto, S ^a   Okagaki, T ^a   Miura Mattausch, M ^a   Abe, H ^b   Hamasaki, T ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b Burr Brown Japan Limited   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21944447252     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1339252     Document Type: Article

References (10)

1. F. N. Hooge, IEEE Trans. Electron Devices 41, 1926 (1994).
2. L. K. J. Vandamme, X. Li, and D. Rigaud, IEEE Trans. Electron Devices 41, 1936 (1994).
3. S. Christensson, I. Lundstrom, and C. Svensson, Solid-State Electron. 11, 797 (1968).
4. F. N. Hooge, Physica B 83, 14 (1976).
5. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, IEEE Trans. Electron Devices 37, 654 (1990).
6. M. J. Deen, M. E. Levinshtein S. L. Rumyantsev, and J. Orchard-Webb, Semicond. Sci. Technol. 14, 298 (1999).
7. N. Mutoh and N. Teranishi, Solid-State Electron. 31, 1675 (1988).
8. S. Selberherr, Analysis and Simulation of Semiconductor Devices (Springer, Wien, 1981), p. 106.
9. W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952).
10. Y.-C. Tseng, W. M. Huang, V. Ilderem, and J. C. S. Woo, IEEE Electron Device Lett. 20, 9 (1999), and references cited therein.