Characterization of low-frequency noise in GaAs nanowire field-effect transistors controlled by Schottky wrap gate

Japanese Journal of Applied Physics

Volumn 50, Issue 6 PART 2, 2011, Pages

  Miura, Kensuke ^a   Shiratori, Yuta ^a   Kasai, Seiya ^a,b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; BARRIER LAYERS; FABRICATED DEVICE; FLICKER NOISE; GAAS; GATE LENGTH; GATE REGION; GATE-LEAKAGE CURRENT; GENERATION-RECOMBINATION; GENTLE SLOPES; HIGH FREQUENCY; LOW-FREQUENCY NOISE; METAL OXIDE SEMICONDUCTOR; NOISE SPECTRA; SCHOTTKY WRAP GATES; SIZE DEPENDENCE;

ALUMINUM GALLIUM ARSENIDE; GALLIUM ALLOYS; GALLIUM ARSENIDE; LEAKAGE CURRENTS; MESFET DEVICES; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THERMAL NOISE; VANADIUM;

TRANSISTORS;

EID: 79959485864     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.06GF18     Document Type: Article

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