Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body

IEEE Electron Device Letters

Volumn 27, Issue 9, 2006, Pages 765-768

  Lim, Y F ^a   Xiong, Y Z ^a   Singh, N ^a   Yang, R ^a   Jiang, Y ^b   Chan, D S H ^b   Loh, W Y ^a   Bera, L K ^a   Lo, G Q ^a   Balasubramanian, N ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

FinFET; Flicker (1 f) noise; Gate all around (GAA); Noise; Random telegraph signals (RTS)

Indexed keywords

GATES (TRANSISTOR); SIGNAL NOISE MEASUREMENT; SPURIOUS SIGNAL NOISE;

FLICKER (L/F) NOISE; GATE-ALL-AROUND (GAA); RANDOM TELEGRAPH SIGNAL (RTS); SCATTERING COEFFICIENTS;

FIELD EFFECT TRANSISTORS;

EID: 33748479471     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.880640     Document Type: Article

References (21)

1. Y. K. Choi, T. J. King, and C. Hu, "Nanoscale CMOS spacer FinFET for the terabit era," IEEE Electron Device Lett., vol. 23, no. 1, pp. 25-27, Jan. 2002.
2. H. S. P. Wong, D. J. Frank, P. M. Solomon, C. Wann, and J. Welser, "Nanoscale CMOS," Proc. IEEE, vol. 87, no. 4, pp. 537-570, Apr. 1999.
3. J. T. Park and J. P. Colinge, "Multiple-gate SOI MOSFETs: Device design guidelines," IEEE Trans. Electron Devices, vol. 49, no. 12, pp. 2222-2229, Dec. 2002.
4. N. Singh, A. Agarwal, L. K. Bera, R. Kumar, G. Q. Lo, B. Narayanan, and D.-L. Kwong, "Gate-all-around MOSFETs: Lateral ultra-narrow (≤ 10 nm) fin as channel body," Electron. Lett., vol. 41, no. 24, pp. 1353-1354, Nov. 2005.
5. M. H. Tsai and T. P. Ma, "The impact of device scaling on the current fluctuations in MOSFET's," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 2061-2068, Nov. 1994.
6. G. Ghibaudo and T. Boutchacha, "Electrical noise and RTS fluctuations in advanced CMOS devices," Microelectron. Reliab., vol. 42, no. 4/5, pp. 573-582, Apr. 2002.
7. M. J. Kirton and M. J. Uren, "Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/f) noise," Adv. Phys., vol. 38, no. 4, pp. 367-468, Nov. 1989.
8. Z. J. Ma, Z. H. Liu, Y. C. Cheng, P. K. Ko, and C. Hu, "New insight into high-field mobility enhancement of nitrided-oxide N-MOSFET's based on noise measurement," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 2205-2209, Nov. 1994.
9. J. S. Lee, Y. K. Choi, D. Ha, T. J. King, and J. Bokor, "Low-frequency noise characteristics in p-channel FinFETs," IEEE Electron Device Lett., vol. 23, no. 12, pp. 722-724, Dec. 2002.
10. J. S. Lee, Y. K. Choi, D. Ha, S. Balasubramanian, T. J. King, and J. Bokor, "Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs," IEEE Electron Device Lett., vol. 24, no. 3, pp. 186-188, Mar. 2003.
11. 2 MDD n-MOSFETs," Solid State Electron., vol. 44, no. 6, pp. 1013-1019, Jun. 2000.
12. 2-Si transistors," Appl. Phys. Lett., vol. 61, no. 14, pp. 1691-1693, Oct. 1992.
13. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, "Random telegraph noise of deep-submicrometer MOSFETs," IEEE Electron Device Lett., vol. 11, no. 2, pp. 90-92, Feb. 1990.
14. 0.3 pMOSFETs," IEEE Trans. Electron Devices, vol. 50, no. 12, pp. 2513-2519, Dec. 2003.
15. 2 interface," J. Appl. Phys., vol. 68, no. 1, pp. 200-204, Jul. 1990.
16. F. Daugé, J. Pretet, S. Cristoloveanu, A. Vandooren, L. Mathew, J. Jomaah, and B.-Y. Nguyen, "Coupling effects and channels separation in FinFETs," Solid State Electron., vol. 48, no. 4, pp. 535-542, Apr. 2004.
17. H. M. Bu, Y. Shi, X. L. Yuan, J. Wu, S. L. Gu, Y. D. Zheng, H. Majima, H. Ishikuro, and T. Hiramoto, "Random telegraph signals and low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels," Appl. Phys. Lett., vol. 76, no. 22, pp. 3259-3261, May 2000.
18. F. Liu, M. Bao, H.-J. Kim, K. L. Wang, C. Li, X. Liu, and C. Zhou, "Giant random telegraph signals in the carbon nanotubes as a single defect probe," Appl. Phys. Lett., vol. 86, no. 16, p. 163102, Apr. 2005.
19. T. G. M. Kleinpenning, "On 1/f noise and random telegraph noise in very small electronic devices," Physica B, vol. 164, no. 3, pp. 331-334, Sep. 1990.
20. E. Simoen and U. Magnusson, "A low-frequency noise study of gate-allaround SOI transistors," IEEE Trans. Electron Devices, vol. 40, no. 11, pp. 2054-2059, Nov. 1993.
21. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, "A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors," IEEE Trans. Electron Devices, vol. 37, no. 3, pp. 654-665, Mar. 1990.