Effect of size reduction on switching characteristics in GaAs-based Schottky-wrap-gate quantum wire transistors

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 3086-3090

  Shiratori, Yuta ^a   Kasai, Seiya ^a,b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

GaAs; Operation temperature; Power consumption; Quantum wire transistor; Schottky wrap gate; Switching voltage

Indexed keywords

DIGITAL DEVICES; ELECTRIC POWER UTILIZATION; ELECTRIC WIRE; GALLIUM ALLOYS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SIZE DETERMINATION; TRANSISTORS; WIRE;

GAAS; OPERATION TEMPERATURE; POWER CONSUMPTION; QUANTUM WIRE TRANSISTOR; SCHOTTKY WRAP GATE; SWITCHING VOLTAGE;

SWITCHING;

EID: 54249092095     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.3086     Document Type: Article

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