Effect of annealing ambient on the structural, optical and electrical properties of (Mg,Al)-codoped ZnO thin films

Physica Scripta

Volumn 85, Issue 3, 2012, Pages

  Duan, L B ^a   Zhao, X R ^a   Liu, J M ^a   Geng, W C ^a   Xie, H Y ^a   Sun, H N ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BURSTEIN-MOSS EFFECTS; C-AXIS ORIENTATIONS; CO-DOPED ZNO; CO-DOPING; HEXAGONAL WURTZITE STRUCTURE; IN-VACUUM; MG-DOPING; NITROGEN ANNEALING; OPTICAL AND ELECTRICAL PROPERTIES; POST ANNEALING; TRANSPARENT CONDUCTING OXIDE; VACUUM-ANNEALING; ZNO;

ALUMINUM; ANNEALING; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ENERGY GAP; METALLIC FILMS; NITROGEN; SOL-GEL PROCESS; VACUUM; ZINC OXIDE; ZINC SULFIDE;

SEMICONDUCTOR DOPING;

EID: 84863261880     PISSN: 00318949     EISSN: 14024896     Source Type: Journal    
DOI: 10.1088/0031-8949/85/03/035709     Document Type: Article

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