Band-gap modified Al-doped Zn1-xMgxO transparent conducting films deposited by pulsed laser deposition

Applied Physics Letters

Volumn 85, Issue 8, 2004, Pages 1374-1376

  Matsubara, K ^a   Tampo, H ^a   Shibata, H ^a   Yamada, A ^a   Fons, P ^a   Iwata, K ^a   Niki, S ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DOPING (ADDITIVES); ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; EXCIMER LASERS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GLASS; INFRARED SPECTROPHOTOMETERS; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; PROFILOMETRY; PULSED LASER DEPOSITION; SUBSTRATES; THIN FILMS; TRANSPARENCY; X RAY DIFFRACTION;

BAND GAP ENERGY; ELECTRON ACCELERATION; THIN FILM SOLAR CELLS; TRANSPARENT CONDUCTING FILMS (TCO);

ZINC COMPOUNDS;

EID: 4544323521     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1784544     Document Type: Article

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