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Journal of Materials Science: Materials in Electronics

Volumn 21, Issue 11, 2010, Pages 1115-1118

Effect of Mg content on structure and properties of Mg x Zn 1-x O:Al UV transparent conducting films

(5) Wang, Hua a Huang, Zhu a Xu, Ji Wen a Yang, Ling a Ren, Ming Fang a

a GUILIN UNIVERSITY OF ELECTRONIC TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AL FILMS; AL-DOPING; ANNEALING TEMPERATURES; ARGON ATMOSPHERES; BAND GAPS; BASIC STRUCTURE; CUBIC STRUCTURE; ELECTRICAL CONDUCTION; MG CONTENT; OPTICAL AND ELECTRICAL PROPERTIES; QUARTZ GLASS; RADIO FREQUENCY MAGNETRON SPUTTERING; SINGLE PHASE; STRUCTURE AND PROPERTIES; TRANSPARENT CONDUCTING FILMS; WAVELENGTH REGIONS; WURTZITE STRUCTURE; ZNO;

ARGON; CONDUCTIVE FILMS; ELECTRIC PROPERTIES; ENERGY GAP; METALLIC FILMS; QUARTZ; ZINC; ZINC OXIDE; ZINC SULFIDE;

ALUMINUM;

EID: 78049527925 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-009-0027-9 Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.