Optical properties of the partially strain relaxed InGaN/GaN light-emitting diodes induced by p-type GaN surface texturing

IEEE Electron Device Letters

Volumn 32, Issue 2, 2011, Pages 182-184

  Sun, Yu Hsuan ^a   Cheng, Yun Wei ^a   Wang, Szu Chieh ^a   Huang, Ying Yuan ^a   Chang, Chun Hsiang ^a   Yang, Sheng Chieh ^a   Chen, Liang Yi ^a   Ke, Min Yung ^a   Li, Chi Kang ^a   Wu, Yuh Renn ^a   Huang, Jianjang ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Light emitting diode (LED); strain relaxation; surface texturing

Indexed keywords

CURRENT LEVELS; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; LIGHT EXTRACTION; LOW TEMPERATURES; NONRADIATIVE DEFECTS; OPTICAL POWER; P-TYPE GAN; QUANTUM CONFINED STARK EFFECT; STRAIN-RELAXED; SURFACE TEXTURING; SURFACE-ROUGHENING; SURFACE-TEXTURED;

DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; OPTICAL PROPERTIES; QUANTUM EFFICIENCY; SPECTROSCOPY; STRAIN CONTROL; STRAIN RELAXATION;

LIGHT EMITTING DIODES;

EID: 79151471542     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2093503     Document Type: Article

References (12)

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