SCOPUS 정보 검색 플랫폼

Volumn 22, Issue 13, 2012, Pages 6206-6212

Device structure-dependent field-effect and photoresponse performances of p-type ZnTe:Sb nanoribbons

(11) Wu, Di a Jiang, Yang a Zhang, Yugang a Li, Junwei a Yu, Yongqiang a Zhang, Yuping b Zhu, Zhifeng a Wang, Li a Wu, Chunyan a Luo, Linbao a Jie, Jiansheng a,b

a HEFEI UNIVERSITY OF TECHNOLOGY (China)

b SOOCHOW UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; MESFET DEVICES; MIS DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; PHOTODETECTORS; SEMICONDUCTOR DOPING; TRANSPORT PROPERTIES;

BACK-GATE; DETECTIVITY; DEVICE PERFORMANCE; DEVICE STRUCTURES; ENHANCED PERFORMANCE; FAST RESPONSE; FIELD-EFFECT; NANO-DEVICES; NANO-MOSFETS; NANORIBBONS; P-TYPE; P-TYPE CONDUCTIVITY; P-TYPE DOPING; PHOTOCONDUCTIVE GAINS; PHOTORESPONSES; RESPONSIVITY; SB-DOPED; STRUCTURE DEPENDENT; THERMAL CO-EVAPORATION; TOP-GATE;

ZINC COMPOUNDS;

EID: 84863231356 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c2jm16632a Document Type: Article

Times cited : (104)

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