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Volumn 95, Issue 26, 2009, Pages

Role of photovoltaic effects on characterizing emission properties of InGaN/GaN light emitting diodes

(10) Song, Jae Ho a Kim, Ho Jong a Ahn, Byung Jun a Dong, Yanqun a Hong, Sayong a Song, Jung Hoon a Moon, Youngboo b Yuh, Hwan Kuk b Choi, Sung Chul b Shee, Sangkee b

a Kongju National University (South Korea)

b THELEDS Co Ltd (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE LIGHT EMITTING DIODES; EMISSION PROPERTIES; EXCITATION INTENSITY; HIGH TEMPERATURE; INCIDENT LASER; INGAN/GAN; OPEN CIRCUIT CONDITIONS; PEAK POSITION; PHOTO-VOLTAGE; PHOTOGENERATED CARRIERS; PHOTOLUMINESCENCE SPECTRUM; PL EXCITATIONS; PL INTENSITY; PL MEASUREMENTS; QUANTUM WELL; RADIATIVE EFFICIENCY; SAMPLE TEMPERATURE; SHORT-CIRCUIT CONDITIONS; STRAIGHT-FORWARD METHOD;

LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; PHOTOVOLTAIC EFFECTS; QUANTUM WELL LASERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 73649117829 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3272679 Document Type: Article

Times cited : (31)

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