Effects of strain-control layers on piezoelectric field and indium incorporation in InGaN/GaN blue quantum wells

Physica Status Solidi - Rapid Research Letters

Volumn 4, Issue 8-9, 2010, Pages 221-223

  Song, Jae Ho ^a   Dong, Yanqun ^a   Kim, Ho Jong ^a   Ahn, Byung Jun ^a   Kim, Tae Soo ^a   Hong, Soon Ku ^b   Yuh, Hwan Kuk ^c   Choi, Sung Chul ^c   Moon, Youngboo ^c   Shee, Sangkee ^c   Lee, Jae Hak ^c   Song, Jung Hoon ^a  

^a Kongju National University   (South Korea)

^b Chungnam National University   (South Korea)

^c THELEDS Co Ltd   (South Korea)

Author keywords

Electroreflectance; Nitride semiconductors; Piezoelectric effects; Quantum wells

Indexed keywords

BLUE-EMITTING; EFFECTS OF STRAINS; ELECTROREFLECTANCE; ELECTROREFLECTANCE SPECTROSCOPIES; IDENTICAL STRUCTURES; INGAN/GAN; INGAN/GAN QUANTUM WELL; NITRIDE SEMICONDUCTORS; PIEZO-ELECTRIC EFFECTS; PIEZO-ELECTRIC FIELDS; QUANTUM WELL; TEST SAMPLES;

INDIUM; NITRIDES; PIEZOELECTRICITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77957030065     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004246     Document Type: Article

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