Comparison among lifetime techniques for the detection of transition metal contamination

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 157-163

  Polignano, M L ^a   Cazzaniga, F ^a   Sabbadini, A ^a   Queirolo, G ^a   Cacciato, A ^a   Di Bartolo, A ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

Contamination; Minority carrier lifetime; Transition metals

Indexed keywords

COMPOSITION EFFECTS; CONTAMINATION; CORRELATION METHODS; DIFFUSION IN SOLIDS; IMPURITIES; PHOTOCONDUCTIVITY; SURFACE STRUCTURE;

ELYMAT; MINORITY CARRIER LIFETIME; PHOTOCONDUCTIVE DECAY (PCD); SURFACE PHOTOVOLTAGE (SPV); WAFER SURFACE;

TRANSITION METALS;

EID: 0005876783     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01698-4     Document Type: Article

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