An optical technique for measuring surface recombination velocity

Solar Energy Materials and Solar Cells

Volumn 93, Issue 5, 2009, Pages 645-649

  Ahrenkiel, R K ^a,b   Johnston, S W ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Department of Geology and Geological Engineering   (United States)

Author keywords

Carrier lifetime; Characterization; Recombination velocity; Silicon photovoltaics

Indexed keywords

CURVE FITTING; DENDRITES (METALLOGRAPHY); PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON SOLAR CELLS; SILICON WAFERS; VELOCITY;

BULK RECOMBINATIONS; CONTACT LESS; CONTACT-LESS MEASUREMENTS; CRITICAL PARAMETERS; EXCITATION WAVELENGTHS; FITTING PROCEDURES; FREQUENCY TECHNIQUES; FUNCTIONAL MODELS; OPTICAL TECHNIQUES; RECOMBINATION VELOCITY; SEMI-CONDUCTOR WAFERS; SILICON DEVICES; SURFACE RECOMBINATION VELOCITIES;

CARRIER LIFETIME;

EID: 62549101992     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.12.028     Document Type: Article

References (12)

1. M'Saad H., Michel J., Lappe J.J., and Kimerling L.C. Electronic passivation of silicon surfaces by halogens. J. Electron. Mater 23 (1994) 487
2. Waldmeyer J. A contactless method for determination of carrier lifetime, surface recombination velocity, and diffusion constant in semiconductors. J. Appl. Phys. 63 (1988) 1977
3. Palais O., and Arcari A. Contactless measurement of bulk lifetime and surface recombination velocity in silicon wafers. J. Appl. Phys. 93 (2003) 4686
4. Sirleto L., Irqace A., Vitale G., Zeni L., and Cutolo A. All-optical multiwavelength technique for the simultaneous measurement of bulk recombination lifetimes and front/rear surface recombination velocity in single crystal silicon samples. J. Appl. Phys. 93 (2003) 3407
5. Ahrenkiel R.K., and Dashdorj J. Interface recombination velocity measurement by a contactless microwave technique. J. Vac. Sci. Technol. B 22 (2004) 2063
6. 't Hooft G.W., and van Opdorp C. Determination of bulk minority-carrier lifetime and surface/interface recombination velocity from photoluminescence decay of a semi-infinite semiconductor slab. J. Appl. Phys. 60 (1986) 1065
7. van Roosbroeck W. Injected caurrent carrier transport in a semi-infinite semiconductor and the determination of lifetimes and surface recombination velocities. J. Appl. Phys. 26 (1955) 380
8. Luke K.L., and Cheng L. Analysis of the interaction of a laser pulsee with a silicon wafer: determination of bulk lifetime and surface recombination velocity. J. Appl. Phys. 61 (1987) 2282
9. Ahrenkiel R.K. Minority-carrier lifetime in III-V semiconductors. In: Ahrenkiel R.K., and Lundstrom M.S. (Eds). Semiconductors and Semimetals vol. 39 (1993), Academic Press, New York 82
10. Kunst M., and Beck G. The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. J. Appl. Phys. 60 (1986) 3558
11. Beck G., and Kunst M. Contactless scanner for photoactive materials using laser-induced microwave absorption. Rev. Sci. Instrum. 57 (1988) 197
12. Rein S. Lifetime Spectroscopy (2004), Springer, Berlin