DLTS analysis of nickel-hydrogen complex defects in silicon

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 58, Issue 1, 1999, Pages 130-133

  Shiraishi, M ^a,c   Sachse, J U ^a   Lemke, H ^b   Weber, J ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ETCHING; HEAT TREATMENT; HYDROGEN; MOLECULAR STRUCTURE; NICKEL; THERMODYNAMIC STABILITY;

WET ETCHING;

SEMICONDUCTING SILICON;

EID: 0345072500     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00280-3     Document Type: Article

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