Impact of random dopant fluctuation effect on surrounding gate mosfets: From atomic level simulation to circuit performance evaluation

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 12, 2011, Pages 10429-10432

  Wang, Hao ^a   Ma, Chenyue ^a   Zhang, Chenfei ^a   He, Jin ^a,b   Liu, Zhiwei ^b   Lin, Xinnan ^b  

^a PEKING UNIVERSITY   (China)

^b PKU HKUST Shenzhen HongKong Institution   (China)

Author keywords

Atomic; Dopant fluctuation; Surrounding gate MOSFET

Indexed keywords

ATOMS; CIRCUIT SIMULATION; THRESHOLD VOLTAGE; TIMING CIRCUITS;

ATOMIC; ATOMIC LEVEL SIMULATIONS; DOPANT FLUCTUATION; DRIFT-DIFFUSION SIMULATION; RANDOM DOPANT FLUCTUATION; STATISTICAL SIMULATION; SURROUNDING GATE MOSFETS; THRESHOLD VOLTAGE VARIATION;

MOSFET DEVICES;

EID: 84863142666     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.3985     Document Type: Conference Paper

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