메뉴 건너뛰기




Volumn , Issue , 2007, Pages 577-580

Discrete impurity dopant fluctuation in multi-fin FinFFTs: 3D simulation-based study

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE SCALING; DEVICE STRUCTURES; FINFET TECHNOLOGIES;

EID: 43049164004     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2007.4450190     Document Type: Conference Paper
Times cited : (3)

References (10)
  • 1
  • 2
    • 0027813761 scopus 로고
    • Three-dimensional "atomic" simulation of discrete random dopant distribution effects in sub-0.1 m MOSFETs
    • H.-S. Wong and Y. Taur, "Three-dimensional "atomic" simulation of discrete random dopant distribution effects in sub-0.1 m MOSFETs," Tech. Dig. IEDM, 1993, pp. 705-708.
    • (1993) Tech. Dig. IEDM , pp. 705-708
    • Wong, H.-S.1    Taur, Y.2
  • 3
    • 0035307248 scopus 로고    scopus 로고
    • Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: A 3-D density-gradient simulation study
    • Apr
    • A. Asenov, G. Slavcheva, A. R. Brown, J. H. Davies, and S. Saini, "Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study," IEEE Trans. Electron Devices, vol. 48, pp. 722-729, Apr. 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , pp. 722-729
    • Asenov, A.1    Slavcheva, G.2    Brown, A.R.3    Davies, J.H.4    Saini, S.5
  • 4
    • 0035883854 scopus 로고    scopus 로고
    • Statistical analysis of semiconductor devices
    • Sep
    • I. D. Mayergoyz and P. Andrei, "Statistical analysis of semiconductor devices," Journal of Appied Physics, vol. 90, pp. 3019-3029, Sep. 2001.
    • (2001) Journal of Appied Physics , vol.90 , pp. 3019-3029
    • Mayergoyz, I.D.1    Andrei, P.2
  • 5
    • 43049163781 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors, 2006 update (Online: http://public.itrs.net/).
    • International Technology Roadmap for Semiconductors, 2006 update (Online: http://public.itrs.net/).
  • 6
    • 22244484728 scopus 로고    scopus 로고
    • Where do the dopants go?
    • Jul
    • S. Roy and A. Asenov, "Where do the dopants go?," Science Mag., vol. 309, pp. 388-390, Jul. 2005.
    • (2005) Science Mag , vol.309 , pp. 388-390
    • Roy, S.1    Asenov, A.2
  • 7
    • 34547921216 scopus 로고    scopus 로고
    • Random Dopant Fluctuation in Limited-Width FinFET Technologies
    • Aug
    • M.-H. Chiang, J.-N. Lin, K. Kim, and C.-T. Chuang, "Random Dopant Fluctuation in Limited-Width FinFET Technologies," IEEE Trans. Electron Devices, vol. 54, pp. 2055-2060, Aug. 2007.
    • (2007) IEEE Trans. Electron Devices , vol.54 , pp. 2055-2060
    • Chiang, M.-H.1    Lin, J.-N.2    Kim, K.3    Chuang, C.-T.4
  • 8
    • 0031365880 scopus 로고    scopus 로고
    • Intrinsic MOSFET parameter fluctuations due to random dopant placement
    • Dec
    • X. Tang, V. K. De, and J. D. Meindl, "Intrinsic MOSFET parameter fluctuations due to random dopant placement," IEEE Trans. VLSI Systems, vol. 5, pp. 369-376, Dec. 1997.
    • (1997) IEEE Trans. VLSI Systems , vol.5 , pp. 369-376
    • Tang, X.1    De, V.K.2    Meindl, J.D.3
  • 9
    • 43049173250 scopus 로고    scopus 로고
    • Taurus-Device, User Guide, ver. V-2003.12, Synopsis, Inc., Dec. 2003.
    • Taurus-Device, User Guide, ver. V-2003.12, Synopsis, Inc., Dec. 2003.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.