Combinatorial deposition of microcrystalline silicon films using multihollow discharge plasma chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 51, Issue 1 PART 2, 2012, Pages

  Koga, Kazunori ^a   Matsunaga, Takeaki ^a   Kim, Yeonwon ^a   Nakahara, Kenta ^a   Yamashita, Daisuke ^a   Matsuzaki, Hidefumi ^a   Kamataki, Kunihiro ^a   Uchida, Giichiro ^a   Itagaki, Naho ^a   Shiratani, Masaharu ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMBINATORIAL DEPOSITION; DEPOSITION CONDITIONS; DEVICE QUALITY; DISCHARGE PLASMA; FLUX RATIO; GAS PRESSURES; HIGH DEPOSITION RATES; HIGH-PRESSURE DEPLETION; HYDROGENATED MICROCRYSTALLINE SILICON; LOW DEFECT DENSITIES; MICROCRYSTALLINE SILICON FILMS; PLASMA CHEMICAL VAPOR DEPOSITION; PROCESS WINDOW; SI FILMS;

METALLIC FILMS; MICROCRYSTALLINE SILICON; PLASMA CVD; PLASMA THEORY;

CHEMICAL VAPOR DEPOSITION;

EID: 84863123233     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.01AD02     Document Type: Conference Paper

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