Two-dimensional spatial profile of volume fraction of nanoparticles incorporated into a-Si:H films deposited by plasma CVD

IEEE Transactions on Plasma Science

Volumn 36, Issue 4 PART 1, 2008, Pages 888-889

  Nakamura, William Makoto ^a   Miyahara, Hiroomi ^a   Sato, Hiroshi ^a   Matsuzaki, Hidefumi ^a   Koga, Kazunori ^a   Shiratani, Masaharu ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Clusters; Hydrogenated amorphous silicon (a Si:H); Multi hollow plasma CVD; Photovoltaic cell materials; Thickness measurements

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRIC DISCHARGES; ELECTRONIC PROPERTIES; FERMI LEVEL; METALLIC FILMS; NANOPARTICLES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NONMETALS; OPTICAL ENGINEERING; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SCALE (DEPOSITS); SILICON; TITRATION; TWO DIMENSIONAL;

A-SI:H FILMS; CLUSTERS; DISCHARGE PLASMAS; HIGH-SPATIAL RESOLUTION; HYDROGENATED AMORPHOUS SILICON (A-SI:H); HYDROGENATED AMORPHOUS SILICON FILMS; MULTI-HOLLOW PLASMA CVD; OPTICAL-; PHOTOVOLTAIC CELL MATERIALS; PLASMA SCIENCE; PLASMA-CVD; SCANNING METHODS; SPATIAL PROFILES; THICKNESS MEASUREMENTS;

AMORPHOUS FILMS;

EID: 50249139217     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2008.923830     Document Type: Article

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