Gas-temperature control in VHFPECVD process for high-rate (>5 nm/s) growth of microcrystalline silicon thin films

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 3-4, 2010, Pages 521-524

  Sobajima, Yasushi ^a   Higuchi, Takuya ^a   Chantana, Jakapan ^a   Toyama, Toshihiko ^a   Sada, Chitose ^a   Matsuda, Akihisa ^a   Okamoto, Hiroaki ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION CONDITIONS; GAS TEMPERATURE; HIGH DENSITY PLASMAS; HIGH QUALITY; HIGH RATE; MICROCRYSTALLINE SILICON THIN FILMS; MONOSILANES; OPTOELECTRONIC PROPERTIES; TIME EVOLUTIONS; VHF-PECVD;

EMISSION SPECTROSCOPY; LEAKAGE (FLUID); MICROCRYSTALLINE SILICON; OPTICAL EMISSION SPECTROSCOPY; PLASMA DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; THIN FILMS;

FILM GROWTH;

EID: 77952577548     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982711     Document Type: Conference Paper

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