High rate deposition of highly stable a-Si:H films using multi-hollow discharges for thin films solar cells

Surface and Coatings Technology

Volumn 205, Issue SUPPL. 1, 2010, Pages

  Nakamura, William Makoto ^a   Matsuzaki, Hidefumi ^a   Sato, Hiroshi ^a   Kawashima, Yuuki ^a   Koga, Kazunori ^a   Shiratani, Masaharu ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

A Si:H solar cell; Deposition rate; Light induced degradation; Multi hollow discharge plasma CVD

Indexed keywords

A-SI:H; A-SI:H SOLAR CELL; DISCHARGE PLASMA; HIGH STABILITY; HIGH-RATE DEPOSITION; LIGHT EXPOSURE; LIGHT-INDUCED DEGRADATION; SOLAR-CELL APPLICATIONS; THICKNESS UNIFORMITY; THIN FILMS SOLAR CELLS;

CHEMICAL STABILITY; CHEMICAL VAPOR DEPOSITION; DEFECT DENSITY; DEGRADATION; DEPOSITION RATES; ELECTRIC DISCHARGES; METALLIC FILMS; PLASMA DEPOSITION; PLASMA STABILITY; PLASMA THEORY; SILICON; SOLAR CELLS;

DEPOSITION;

EID: 78649963247     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2010.07.081     Document Type: Article

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