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Volumn 111, Issue 1, 2012, Pages

Studies of pure and nitrogen-incorporated hydrogenated amorphous carbon thin films and their possible application for amorphous silicon solar cells

(3) Dwivedi, Neeraj a,b Kumar, Sushil a Malik, Hitendra K b

a NATIONAL PHYSICAL LABORATORY (India)

b INDIAN INSTITUTE OF TECHNOLOGY DELHI (India)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; A-SIC:H; CHEMICAL VAPOR; CURRENT-VOLTAGE MEASUREMENTS; FULL-SPECTRUM; HIGH HARDNESS; HYDROGENATED AMORPHOUS CARBON; HYDROGENATED AMORPHOUS CARBON (A-C:H); MAXIMUM VALUES; METAL SUBSTRATE; NANOMECHANICAL PROPERTY; NITROGEN INCORPORATION; RECTIFYING BEHAVIORS; SELF-BIAS; SIMULATION STUDIES; WINDOW LAYER;

ACTIVATION ENERGY; AMORPHOUS CARBON; AMORPHOUS FILMS; BIOMECHANICS; CARBON FILMS; CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; HARDNESS; HETEROJUNCTIONS; HYDROGENATION; NANOSTRUCTURED MATERIALS; NITROGEN; NITROGEN PLASMA; OPTOELECTRONIC DEVICES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PROTECTIVE COATINGS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THIN FILMS;

AMORPHOUS SILICON;

EID: 84862964909 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3675164 Document Type: Article

Times cited : (40)

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