Effect of structural variations in amorphous silicon based single and multi-junction solar cells from numerical analysis

Solar Energy Materials and Solar Cells

Volumn 94, Issue 9, 2010, Pages 1542-1545

  Kabir, M I ^a   Ibrahim, Zahari ^a   Sopian, Kamaruzzaman ^a   Amin, Nowshad ^a,b  

^a UNIVERSITI KEBANGSAAN MALAYSIA   (Malaysia)

^b KING SAUD UNIVERSITY   (Saudi Arabia)

Author keywords

a Si:H; a SiC:H; Amorphous silicon; AMPS 1D; Double junction; Single junction; Temperature gradient; Triple junction

Indexed keywords

A-SI:H; A-SIC:H; AMORPHOUS SILICON CARBIDE (A-SIC:H); BOTTOM CELLS; CELL EFFICIENCY; DOPING CONCENTRATION; HIGH EFFICIENCY; HYDROGENATED AMORPHOUS SILICON (A-SI:H); I-LAYER; JUNCTION CELLS; MAXIMUM EFFICIENCY; MULTI JUNCTION SOLAR CELLS; OPERATING TEMPERATURE; PHOTONIC STRUCTURE; SINGLE JUNCTION; SINGLE-JUNCTION CELLS; STRUCTURAL VARIATIONS; TANDEM CELLS; TEMPERATURE GRADIENT; THIN FILM SOLAR CELLS; TRIPLE JUNCTION; TRIPLE JUNCTION CELLS;

AMORPHOUS FILMS; CADMIUM SULFIDE SOLAR CELLS; CELLS; CYTOLOGY; MICROELECTRONICS; NUMERICAL ANALYSIS; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; SILICON CARBIDE; SOLAR CELLS; THERMAL GRADIENTS;

AMORPHOUS SILICON;

EID: 77955415089     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2009.12.031     Document Type: Conference Paper

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