Growth of GaN on ZrB 2 substrate by metal-organic vapor phase epitaxy

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 502-507

  Tomida, Yoshihito ^a   Nitta, Shugo ^a   Kamiyama, Satoshi ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a   Otani, Shigeki ^b   Kinoshita, Hiroyuki ^c   Liu, Rong ^d   Bell, Abigail ^d   Ponce, Fernando A ^d  

^a MEIJO UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c KYOCERA CORPORATION   (Japan)

^d ARIZONA STATE UNIVERSITY   (United States)

Author keywords

GaN; MOVPE; New substrate; Nitridation; ZrB 2

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; TRANSMISSION ELECTRON MICROSCOPY; ZIRCONIUM COMPOUNDS;

HIGH-POWER EMISSION;

GALLIUM NITRIDE;

EID: 0038408801     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00466-5     Document Type: Conference Paper

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