Phase transformation and semiconductor-metal transition in thin films of VO2 deposited by low-pressure metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 92, Issue 11, 2002, Pages 6495-6504

  Sahana, M B ^a   Subbanna, G N ^a   Shivashankar, S A ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; GRAIN BOUNDARIES; HYSTERESIS; LIGHT TRANSMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; PHASE TRANSITIONS; SPECTROSCOPIC ANALYSIS; THIN FILMS; VANADIUM COMPOUNDS;

SEMICONDUCTOR METAL TRANSITIONS;

SEMICONDUCTING FILMS;

EID: 0036906169     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1518148     Document Type: Article

References (25)

1. K. Kosuge, J. Phys. Chem. Solids 28, 1613 (1967).
2. A. Zylbersztejn and N.F. Mott, Phys. Rev. B 11, 4383 (1975).
3. Ch. Leroux, G. Nihoul, and G. van Tendeloo, Phys. Rev. B 57, 5111 (1998).
4. J.F. De Natale, P.J. Hood, and A.B. Harker, J. Appl. Phys. 66, 5844 (1989).
5. C.H. Griffiths and H.K. Eastwood, J. Appl. Phys. 45, 2201 (1974).
6. F.C. Case, J. Vac. Sci. Technol. A 2, 1509 (1984).
7. M.H. Lee and Myoung-Geun Kim, Thin Solid Films 286, 219 (1996).
8. Z.P. Wu, A. Miyashita, I. Nashiyama, and H. Naramoto, Philos. Mag. Lett. 79, 813 (1999).
9. H.L.M. Chang, Y. Gao, J. Guo, C.M. Foster, H. You, T.J. Zhang, and D.-J. Lam, J. Phys. IV 1, C2-953 (1991).
10. H.K. Kim, H. You, R.P. Chiarello, H.L.M. Chang, T.J. Zhang, and D.J. Zhang, Phys. Rev. B 47, 12 900 (1993).
11. C. Cesari, Ch. Leroux, and G. Nihoul, Key Eng. Mater. 155-156, 227 (1998).
12. S. Deki, Y. Aoi, and A. Kajinami, J. Mater. Sci. 32, 4269 (1997).
13. E. Kusano and J.A. Theil, J. Vac. Sci. Technol. A 7, 1314 (1989).
14. M.B. Sahana, M.S. Dharmaprakash, and S.A. Shivashankar, J. Mater. Chem. 12, 333 (2002).
15. J.C. Valmalette and J.-R. Gavarri, Mater. Sci. Eng., B 54, 168 (1998).
16. P. Legrand, J.-R. Gavarri, J.-C. Valmalette, G. Vacquier, and D. Lefevre, U.S. Patent No. 6,358,307.
17. F. Theobald, R. Cabala, and J. Bernard, J. Solid State Chem. 17, 431 (1976).
18. J.C. Valmalette, R. Houriet, H. Hofmann, and J.R. Gavarri, Eur. J. Solid State Inorg. Chem. 34, 317 (1997).
19. I. Takahashi, M. Hibino, and T. Kudo, Jpn. J. Appl. Phys., Part 1 40, 1391 (2001).
20. J.-G. Yoon, H.K. Oh, and S.J. Lee, Phys. Rev. B 60, 2839 (1999).
21. C.V. Thompson and H.I. Smith, Appl. Phys. Lett. 44, 603 (1984).
22. H.I. Smith and D.C. Flanders, Appl. Phys. Lett. 32, 349 (1978).
23. F. Beteille, L. Mazerolles, and J. Livage, Mater. Res. Bull. 34, 2177 (1999).
24. C.N. Berglund and A. Jayaraman, Phys. Rev. 185, 1034 (1969).
25. A.R. Begishev, G.B. Galiev, A.S. Ignat'ev, V.G. Mokerov, and V.G. Poshin, Fiz. Tverd. Tela. (Leningrad) 20, 1643 (1978) [Sov. Phys. Solid State 20, 951 (1978)].