Nucleation and resistivity of ultrathin TiN films grown by high-power impulse magnetron sputtering

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 1045-1047

  Magnus, Fridrik ^a,b   Ingason, Arni S ^a,c   Olafsson, Sveinn ^a   Gudmundsson, Jon T ^a,d  

^a UNIVERSITY OF ICELAND   (Iceland)

^b UPPSALA UNIVERSITY   (Sweden)

^c LINKÖPING UNIVERSITY   (Sweden)

^d SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Diffusion barrier; high power impulse magnetron sputtering (HiPIMS); resistivity; TiN

Indexed keywords

ELECTRICAL CHARACTERISTIC; FILM RESISTANCE; GRAIN BOUNDARY SCATTERING; HIGH-POWER; IN-SITU; TIN FILMS; ULTRA-THIN;

COALESCENCE; DIFFUSION BARRIERS; ELECTRIC CONDUCTIVITY; FILM GROWTH; GRAIN BOUNDARIES; GROWTH TEMPERATURE; MAGNETRON SPUTTERING; METALLIC FILMS; TIN;

TITANIUM NITRIDE;

EID: 84862902589     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2196018     Document Type: Article

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