Influence of line dimensions on the resistance of Cu interconnections

IEEE Electron Device Letters

Volumn 19, Issue 12, 1998, Pages 508-510

  Chen, Fen ^a,b   Gardner, Don ^c  

^a UNIVERSITY OF DELAWARE   (United States)

^b IBM MICROELECTRONICS   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE; ELECTRON SCATTERING; GRAIN BOUNDARIES; MATHEMATICAL MODELS;

COPPER INTERCONNECTIONS; ELASTIC ELECTRON SCATTERING;

MICROELECTRONICS;

EID: 0032292804     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.735762     Document Type: Article

References (5)

1. J. R. Sambles and T. W. Preist, J. Phys. F: Met. Phys., vol. 12, p. 1982, 1971.
2. A. F. Mayadas, M. Shatzkes, and J. F. Janak, Appl. Phys. Lett., vol. 14, p. 345, 1969.
3. E. H. Sondheimer, Advan. Phys., vol. 1, p. 1, 1952.
4. A. J. Dekker, Solid State Physics. Englewood Cliffs, NJ: Prentice-Hill, 1957.
5. D. S. Gardner and D. B. Fraser, in 12th Proc. VLSI Multilevel Interconnection Conf., 1995, p. 287.