The shuttle nanoelectromechanical nonvolatile memory

IEEE Transactions on Electron Devices

Volumn 59, Issue 4, 2012, Pages 1137-1143

  Pott, Vincent ^a   Chua, Geng Li ^b   Vaddi, Ramesh ^c   Tsai, Julius Ming Lin ^a   Kim, Tony T ^c  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Electrostatic actuation; high temperature (HT) electronics; microelectromechanical systems (MEMS); nano electro mechanical systems (NEMS); nonvolatile memory (NVM) devices

Indexed keywords

ADHESION FORCES; DATA STORAGE; ELECTROSTATIC ACTUATION; FINITE ELEMENT METHODS (FEM); HIGH TEMPERATURE; HIGH VOLTAGE; KINEMATIC EQUATIONS; METAL ELECTRODES; METAL LAYER; MICRO-SCALES; NANO ELECTROMECHANICAL SYSTEMS; NANO-ELECTROMECHANICAL; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; P-N JUNCTION; RESISTANCE RATIO; STABLE STATE; STORAGE LAYERS; SWITCHABLE; VAN DER WAALS;

ADHESION; ELECTRODES; ELECTROMECHANICAL DEVICES; ELECTROSTATIC ACTUATORS; ENERGY TRANSFER; FINITE ELEMENT METHOD; MEMS; NONVOLATILE STORAGE; SEMICONDUCTOR JUNCTIONS; VAN DER WAALS FORCES;

FLASH MEMORY;

EID: 84862829684     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2181517     Document Type: Article

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