A high-rel embedded ferroelectric memory

Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07

Volumn , Issue , 2007, Pages 56-59

  Kamp, David A ^a   DeVilbiss, Alan D ^a,b  

^a Celis Semiconductor Corporation   (United States)

^b Next Bench

Author keywords

Data protection; FeRAM; Ferroelectric memory; High reliability; RFID

Indexed keywords

DATA PRIVACY; ENERGY UTILIZATION; FERROELECTRIC DEVICES; FERROELECTRIC RAM; FERROELECTRICITY; MEMORY ARCHITECTURE; NONVOLATILE STORAGE;

DESIGN RULES; EMBEDDED MEMORY; FERAM; FERROELECTRIC MEMORY; HIGH RELIABILITY; NON-VOLATILE MEMORY; OPERATING TEMPERATURE RANGES; READ CYCLE TIME;

RADIO FREQUENCY IDENTIFICATION (RFID);

EID: 48549095807     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/nvmt.2007.4389946     Document Type: Conference Paper

References (3)

1. K. Jones, "2007 To See More RFID Adoption, Continuing Need For Training," InformationWeek, Dec. 11, 2006.
2. S. S. Lee, N. S. Kang, , S. C. Philpy, G. F. Derbenwick, "Reliability and Performance of a 64K Ferroelectric Memory," IEEE Microelectronics Reliability and Qualification Workshop, Oct. 2000.
3. G. F. Derbenwick, D. A. Kamp, S. C. Philpy, A. F. Isaacson, "Advances in FeRAM Technologies," Nonvolatile Memory Technology Symposium, Nov. 2000.