Physical properties and electrical characteristics of H 2O-based and O 3-based HfO 2 films deposited by ALD

Microelectronics Reliability

Volumn 52, Issue 6, 2012, Pages 1043-1049

  Fan, Jibin ^a   Liu, Hongxia ^a   Kuang, Qianwei ^a   Gao, Bo ^a   Ma, Fei ^a   Hao, Yue ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; C-V CURVE; DEPOSITION TEMPERATURES; ELECTRICAL CHARACTERISTIC; P-TYPE SI;

ANNEALING; ATOMIC LAYER DEPOSITION; BINDING ENERGY; DEPOSITION; ELECTRIC PROPERTIES; HAFNIUM; OXIDANTS; OZONE; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS;

HAFNIUM OXIDES;

EID: 84862817772     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.01.010     Document Type: Article

References (19)

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