Effect of processing conditions on the electrical characteristics of atomic layer deposited Al2O3 and HfO2 films

ECS Transactions

Volumn 28, Issue 2, 2010, Pages 213-221

  Rafi, J M ^a   Zabala, M ^a   Beldarrain, O ^a   Campabadal, F ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CAPACITANCE; HAFNIUM OXIDES;

ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE; DEPOSITION TEMPERATURES; ELECTRICAL CHARACTERISTIC; HIGHEST TEMPERATURE; PROCESSING CONDITION; SILICON SUBSTRATES; THERMAL ANNEALING TREATMENT;

ATOMIC LAYER DEPOSITION;

EID: 78650526930     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3372577     Document Type: Conference Paper

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