Thin high-k dielectric layers deposited by ALD

Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

Volumn , Issue , 2009, Pages 27-30

  Campabadal, F ^a   Zabala, M ^a   Rafi, J M ^a   Acero, M C ^a   Sanchez A ^a   Sanchez J ^a   Sanchez S ^a   Andreu, R ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYERS; BREAK DOWN VOLTAGES; CAPACITANCE VOLTAGES; DEPOSITED LAYERS; ELECTRICAL CHARACTERIZATIONS; HIGH - K DIELECTRICS; HIGH-K DIELECTRIC LAYERS; NANO-LAMINATES; NANOLAMINATE; PHYSICAL THICKNESS; SILICON CAPACITORS; THIN LAYERS;

ALUMINA; ALUMINUM; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; ELECTRON DEVICES; HAFNIUM COMPOUNDS; IONIZATION OF GASES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 64949201815     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCED.2009.4800421     Document Type: Conference Paper

References (7)

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