Study of nitrogen impact on VFB-EOT roll-off by varying interfacial SiO2 thickness

Solid-State Electronics

Volumn 62, Issue 1, 2011, Pages 67-71

  Cho, Moonju ^a   Akheyar, Amal ^a   Aoulaiche, Marc ^a   Degraeve, Robin ^a   Ragnarsson, Lars Åke ^a   Tseng, Joshua ^a   Hoffmann, Thomas Y ^a   Groeseneken, Guido ^a  

^a IMEC   (Belgium)

Author keywords

Charge pumping; Dielectric reliability; NBTI; Nitrogen; VFB roll off

Indexed keywords

ABSORBING LAYERS; ATOMIC DIFFUSIONS; CHARGE PUMPING; DIELECTRIC RELIABILITY; EQUIVALENT OXIDE THICKNESS; FLAT-BAND VOLTAGE; FREQUENCY SWEEP; HIGH-K OXIDES; INTERFACIAL TRAPS; INTERFACIAL-LAYER THICKNESS; LONG CHANNEL DEVICES; NBTI; NEGATIVE BIAS TEMPERATURE INSTABILITY; NITROGEN ATOM; NITROGEN CONCENTRATIONS; PLASMA NITRIDATION; POST-DEPOSITION ANNEAL; TRAP DENSITY; VFB ROLL-OFF;

INTEGRATED CIRCUITS; NITROGEN; NITROGEN PLASMA; PLASMA DEPOSITION; PUMPS; RELIABILITY ANALYSIS;

SILICON COMPOUNDS;

EID: 79957960916     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.04.007     Document Type: Article

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